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12th Edition: A New SOI Manufacturing Technology Using Atomic Layer Cleaving |
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Feb 03, 2005 at 11:54 AM |
FRANCOIS J. HENLEY & MICHAEL I. CURRENT, Silicon Genesis Corporation, Campbell, CA, USA
ABSTRACT
A
novel technology using atomic layer cleavage has been developed which
allows Silicon-on-Insulator processing to be available for many
substrate materials. The use of SOI technology is discussed and the
atomic cleaving process is described in detail. The advantages of the
process to the field of device manufacture are illustrated.
A New SOI Manufacturing Technology Using Atomic Layer Cleaving
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