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12th Edition: Innovations in Silicon Germanium Bicmos Processing |
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Feb 03, 2005 at 11:52 AM |
STEPHEN ST. ONGE & MARK DUPUIS, IBM Microelectronics Division, Essex Jct, VT, USA
ABSTRACT
A
retrospective look at the many years of development and production of
silicon germanium (SiGe) processing reveals significant challenges that
have been overcome to make this the mature technology it is today.
Development of the SiGe EPI process was the fundamental achievement
that made this technology possible. Optimising the interaction of this
EPI layer with its surroundings has enabled the achievement of high
bipolar device yield. Integrating this high performance SiGe HBT with
dense CMOS logic and a complement of passive devices creates
technologies which are well suited for a broad range of products. Using
a modular integration approach enables quick migration to next
generation and derivative technologies.
 Innovations in Silicon Germanium Bicmos Processing
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Wafer Processing 