Anja Rosenbusch, Sigma-C Inc, Campbell, CA, USA; Andreas Erdmann, Fraunhofer Institute of Integrated Circuits (IIS-B), Erlangen, Germany; Christoph Friedrich, Infineon Technologies AG, Munich, Germany

Optical extensions, laid out by Sematech and others, have implications for simulation, calling for new solutions. Phase-shifting masks need new models, to accurately predict the intensity imbalance and to forecast conditions under which defects print. This paper shows areas where the lithographer may expect strong assistance through simulation. The results of a study, using mask modelling for optimising edge topography of alternating phase shift mask are presented [1].