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New Product: Low temp CVD offered for nickel silicide contacts by TEL |
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Oct 04, 2006 at 05:45 PM |
 Product Briefing Outline: Tokyo Electron (TEL) has introduced the company's latest 300mm metal CVD (chemical vapor deposition) system ‘Trias' LT Ti/TiN. The new system enables deposition of Ti (Titanium) and TiN (Titanium Nitride) films in low temperature process regimes. Based on the industry-proven Trias platform, the Trias LT Ti/TiN meets the increasing demands for low temperature processing required
in the manufacture of nickel silicide contacts, without the need to migrate to alternative technologies.
Problem: As device dimensions shrink to <45 nm, the traditional method of filling contacts and vias using (Ti/TiN) liner/barrier films may no longer be extendable.
In particular, future contact silicidation processes such as nickel silicide (NiSi) require lower temperatures, sub-400°C.
Solution: The system incorporates an enhanced shower head design, which allows wafer
temperature control over a wide range of deposition temperatures. By applying TEL's novel processing technology and improved shower head design to contact processing, the Trias LT achieves improvements in barrier metal step coverage while enabling low contact resistance and reduced junction leakage. In addition, the Trias LT produces excellent film uniformity, improved repeatability and enhanced particle performance.
Applications: Deposition of Ti/TiN for nickel silicide contacts.
Platform: Trias CVD, the 300mm single-wafer system that incorporates proven concepts from TEL's 200mm CVD systems, offers high productivity and advanced process performance. The system modules feature Precise Control of Temperature (PCOT) technology, a mechanism that produces the required film quality. The Trias CVD system employs a plasma-free dry-cleaning method in order to eliminate chamber damage and ensure stable operation.
Availability: October 2006 onwards.
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Product Briefings 
