Online information source for semiconductor professionals

Product Briefing Outline: FEI Company has introduced the V600FIB, an all-new focused ion beam (FIB) system designed to provide flexibility for high-throughput applications including circuit modification, cross-sectioning, sample prep and failure analysis for semiconductor devices with designs down to 90nm. The upgradeable platform of the V600FIB is designed to ultimately provide advanced circuit edit applications for designs below 65nm, giving users the full range of capabilities coupled to a cost-effective path for meeting future requirements. The first V600FIB, the initial system available on the new platform, has already shipped to NXP, (formerly, Philips Semiconductors) in Nijmegen, the Netherlands, according to the company.

Problem: The rapid time-to-data for defect analysis and shortened cycles for device debugging is becoming a critical aspect of chip manufacturing. Metrology tools that help semiconductor manufacturers finalize chips' designs and achieve full production ramps faster and more efficiently are a requirement, while ensuring lower costs, especially in consumer markets.

Solution: The V600FIB features FEI's ‘Sidewinder' 30kV ion column, a versatile gas delivery system to suit specific application requirements, and a 5-axis tilt stage for stable site-specific cross sectioning for failure analysis applications. The system also accommodates a variety of samples from packaged parts to eight-inch wafers.

Applications: Circuit modification, cross-sectioning, sample prep and failure analysis.

Platform: The V600FIB replaces FEI's FIB 200, which has more than 200 systems installed worldwide. The platform joins FEI's ‘VectraVision' series used for advanced circuit edit for sub-90 nm technology nodes.

Availability: July 2006 onwards.