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Home arrow Product Briefings arrow Lithography arrow New Product: Nikon’s NSR-S610C immersion tool uses 1.30 NA catadioptric len...
New Product: Nikon’s NSR-S610C immersion tool uses 1.30 NA catadioptric lens for sub-45nm patterning Print E-mail
Sep 20, 2006 at 10:54 AM

ImageProduct Briefing Outline: Nikon Corporation has introduced a new lithography tool that is designed to meet the requirements for mass production of 45nm memory and of 32nm logic devices. The NSR-S610C, an ArF immersion scanner, includes an advanced 1.30 NA projection lens and POLANO, Nikon's fourth generation polarization technology. The system will also include proprietary Nikon Local Fill Technology and the Tandem Stage, which enable the system to achieve a claimed throughput of 130 wafers or more per hour. Systems will start shipping by the end of 2006, according to the company.

Problem: With continued scaling, optical lithography is required to image feature sizes through to the 32nm node while experiencing ever declining k1 sensitivity. Continual development efforts are required to enable depth of focus levels to remain within volume fabrication requirements. Increases in NA and control over polarization effects are required.

Solution: The NSR-S610C is claimed to be the first scanner capable of printing 45nm half pitch patterns with sufficient process windows for volume production. The 1.30 NA catadioptric projection optics of the NSR-S610C realize 45nm imaging with ample process margin of k1 = 0.30. With this high NA and fourth generation POLANO polarization technology, the system is capable of producing all critical layers of 45nm devices with sufficient process windows for volume production. The Nikon Tandem Stage uses two stages with different functions to optimize the performance of the tool for immersion lithography. The Exposure Stage is designed to process at very high rates, while the Calibration Stage is used to calibrate the tool between each wafer exchange. The result is a system with high throughput and improved accuracy. Alignment accuracy has been reduced to 6.5nm or less. Additionally, any risk of fluctuations or variations over time in the immersion process is eliminated by frequent calibration checks. Nikon Local Fill Technology provides proven defect-free immersion lithography, according to the company.

Applications: Advanced patterning at the 45nm and 32nm half pitch nodes.

Platform: Based on Nikon's immersion platform the NSR-S609B.

Availability: End of 2006 onwards.
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