Qimonda AG has said that it has qualified and entered production at its 300mm fab in Dresden, Germany with 75nm 512Mb DDR2 memory chip. The device and process technology was jointly developed at Qimonda's Development Centers in Dresden and Munich, Germany, according to the company.
 

"With the qualification of our 75nm DRAM Trench technology and the first product we have reached an important milestone on our technology roadmap," said Thomas Seifert, Member of the Management Board, Market and Operations at Qimonda. "The 75nm technology platform satisfies the performance requirements of upcoming high speed interfaces such as used for DDR3 and graphics products."

With process structures down to 70nm, Qimonda claims that it can fabricate approximately 40 percent more die per wafer than its 90nm devices. Both production partners, Nanya Technology Corporation and JV operations at Inotera Memories, are expected to migrate DRAM production to the new node this year.

"This new product features leading edge technologies with minimum geometries as small as 70nm," said Dr. Pei Lin Pai, Vice President of Global Sales & Marketing and Spokesman of Nanya Technology Corporation. "The advanced technologies enable us for high performance and high density, such as 1Gb / 2Gb DRAM, with competitive cost structure."