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New Product: Line edge roughness reduction at 45nm on Applied’s Producer APF-e system |
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Sep 15, 2006 at 12:57 PM |
 Product Briefing Outline: Applied Materials has
introduced the Applied ‘Producer' ‘APF-e' system for depositing
advanced patterning films in less than or equal to 70nm Flash and DRAM
memory devices and less than or equal to 45nm Logic applications.
According to the company this is a key enhancement to its
first-generation APF film providing for greater optical transparency to
deliver precise lithographic alignment in thicker (greater than 2,000A)
hardmask layers. The APF-e film's are intended to be seen as a
cost-effective hardmask technology featuring high selectivity to
polysilicon and oxide to enable the key etch patterning steps required
for continued geometric scaling
Problem: Today's tough patterning challenges require
innovative pattern transfer solutions that maximize the lithography
process window and improve overall fab economics, especially in
high-density chips like Flash and DRAM. Applied's APF-e film is highly
selective to polysilicon (6:1) and oxide etching (15:1) and eliminates
the line edge roughness associated with photoresist-only schemes,
providing much tighter critical dimensional control for improved device
performance and yield, according to the company. APF-e technology also
eliminates the expensive wet cleaning steps needed by multi-layer
resist processes.
Solution: The APF optically
engineered patterning film stack combines the CVD-based amorphous
carbon APF or APF-e hardmask films with Applied's ‘DARC' films to
enable advanced lithography and etching using standard lithography
tools. Applied's APF films are already being used in up to seven layers
in 70nm Flash memory chips, including shallow trench isolation and
sub-40nm gate definition, plus other key applications. Even more layers
are likely to be implemented in next-generation devices.
Applications: Lithography and etch patterning of shallow trench isolation (STI), gate, and contact features.
Platform: The Producer platform uses a twin chamber architecture that enables simultaneous processing of up to six wafers.
Availability: July 2007 onwards.
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Product Briefings 
