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New Product: High precision substrate-thickness metrology system launched by ISIS sentronics |
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Sep 12, 2006 at 04:38 PM |
 Product briefing outline: ISIS sentronics has launched
the SemDex 300 series wafer metrology system, that is designed to
provide user defined thickness maps of substrates or other (multiple-)
layers (for e.g. SOI) at repeatable rates down to 50nm. A wide range of
materials including silicon, GaN, GaAs, SiC, Glass, Potoresist
etc...can be evaluated, ranging from minimum 3-5µm up to about 1000µm.
Other features such as bow/ warp, flatness, and wafer stress are also
performed as well as surfacing profiling for mini-bumps can be achieved
by exchanging the sensor head.
Problem: Semiconductor substrates are getting
increasingly thinner for various physical and technical reasons. Total
thickness variations of 1 µm or even less is the new benchmark for many
processes, especially for wafer to wafer uniformity for leading edge
lithography requirements. In the MEMS field, high lateral definition is
another challenge.
Solution: The SemDex 300
series incorporates the ISIS patented SCI "Spectral coherence
technology" platform which combines in a unique way, very high
precision 50nm repeat-rate and better than 200nm absolute accuracies at
data acquisition rates of up to 4000/s. The small spot size of 5-20 µm
(depending on the thickness range) permits thickness data to the very
edge of structures.
Applications: Mainly
evaluation of thickness data of substrate grinding, either off-line
with the SemDex 301 wafer inspection tool, or on-line during grinding
with the incorporated StraDex sensor. Membranes or other etched
features in MEMS structures.
Platform: The
SemDex 300 series and StraDex sensors are based the high-throughput
ISIS firmware, according to the company. The operations software works
on the Microsoft XP or 2000 platform and contains optionally SECS/GEM
extension capabilities.
Availability: April 2006 onwards.
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Product Briefings 
