D. Lenoble, ST Microelectronics, Crolles, France

ABSTRACT

Based on calibrated - model simulations, this paper firstly highlights the significant impact of ultra-shallow junctions (USJ) in nano-scaled CMOS technologies. The specific  requirements of USJs according to the transistor's operating electrical targets are discussed and a dedicated figure of merit for USJs is proposed for assessing the applicability of published USJ formation processes. The integration issues are also presented from the point of view of circuit performance and manufacturability, including some economic analysis. Lastly, some perspectives on emerging doping processes are given and the main conclusions are summarized.