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New Product: Applied Endura CuBS PreClean system preserves integrity of ultra-low k films
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Product Briefing Outline: Applied Materials has made a
significant enhancement to its Applied ‘Endura CuBS' (copper
barrier/seed) system with the new ‘Aktiv' Preclean chamber, extending
its capabilities for the 45nm node copper-low k interconnect process
schemes. In addition to effectively removing polymeric residues and
copper oxide from the interconnect, the Aktiv Preclean chamber is
claimed to be the first preclean technology that effectively preserves
the integrity of ultra-low k (k less than or equal to 2.5) dielectrics,
resulting in up to 10% improvement in RC delay over previous reactive
preclean technologies.
Problem: Conventional preclean technology can
raise the k-value of ultra-low k films by as much as 20%. To address
the increasing importance of interfaces as geometries shrink, Applied
offers various preclean technologies to ensure interface integrity
without impact to critical dimensions or material properties. The Aktiv
Preclean chamber is claimed to provide efficient removal of polymeric
residues and reduction of CuO while protecting porous low k inter-level
dielectric (ILD) films, such as Black Diamond II. Unlike conventional
reactive preclean methods, the Aktiv Preclean process results in no
significant change in k-value, thus enabling the transition to
next-generation low k dielectrics.
Solution:
The Applied Aktiv Preclean chamber provides a benign clean process
before depositing the barrier and Cu seed layer in copper
interconnects. Its highly reactive hydrogen radicals gently clean
complex interconnect stacks, assuring low via and line resistance and
increasing parametric yield. The design of the Aktiv Preclean chamber
reduces defects and enables up to 30,000 wafers between maintenance
cycles, an increase of up to 3x over reactive preclean chambers,
according to the company.
Applications: Pre-clean ultra-low k dielectrics.
Platform:
The Applied Endura CuBS PVD system sequentially deposits the Ta(N)/Ta
barrier followed by the Cu seed layer under high-vacuum conditions.
Availability: July 2006 onwards.
