Home
News
Blogs
Fabtech Jobs
Product Briefings
Going Places
300mm Activity Reports
Core Sections
Wafer Processing
Lithography
Fab management
Materials & Gases
Critical Components
Cleanroom
EHS
 
Find

GlobalSpec - The Engineering Search Engine
 
Home arrow Wafer Processing arrow Articles arrow Edition 14 arrow 14th Edition: National Semiconductor Develops New Complemen...
Flash Banner
14th Edition: National Semiconductor Develops New Complementary Bipolar Process for High Speed Print E-mail
Feb 03, 2005 at 09:04 AM
MICHAEL MAIDA, National Semiconductor GmbH, Fürstenfeldbruck, Germany

ABSTRACT

A new high speed analog device has been made. This article describes the processes involved in obtaining the high performance and the reasons for using such processing. The future of such devices is also outlined.
icon National Semiconductor Develops New Complementary Bipolar Process for High Speed, High Performance A
Readers' comments


Bookmark with:
DeliciousDiggredditStumbleUpon
Visit Fabtech Jobs websiteSubscribe to Fabtech weekly newsletter
Related articles
11th Edition: A Novel Dual-Damascene ETCH Process Utilising a High-Selectivity, Ultralow-k  (03/02/2005)
12th Edition: High k Dielectrics for Advanced Dram Applications  (03/02/2005)
14th Edition: Dry Etching of High-k Materials for Future Memory Applications  (03/02/2005)
19th Edition: A new step in high-k materials engineering  (20/01/2005)
19th Edition: A 0.18-µm logic-based MRAM technology for high performance nonvolatile memory  (20/01/2005)
Related jobs
Intermediate Product Engineer  (Portland, 22/11/2007)
Staff Process Engineer  (Portland, 22/11/2007)
Senior Process Development Photolithography Engineer  (Portland, 22/11/2007)
Etch Development Engineer  (Portland, 22/11/2007)
Analog IC Design Engineer  (Austin, 10/08/2007)
300mm