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Select solution for poly and oxide patterned etch |
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Jul 11, 2006 at 11:42 AM |
 Applied Materials announced its Applied Producer APF-e system for
depositing advanced patterning films (APFs) down to the 70nm node for
Flash and DRAM memory devices and down to 45nm for logic applications.
The APF-e film is an enhancement of Applied's first-generation APF. The
film stack is designed to meet critical needs for greater optical
transparency to deliver precise lithographic alignment in thicker
(greater than 2000A) hardmask layers.
The APF-e film stack is highly selective to polysilicon (6:1, poly
etches at six times the rate of the film) and oxide etching (15:1) and
eliminates the line edge roughness associated with photoresist-only
schemes, providing customers with much tighter critical dimensional
control for improved device performance and yield. APF-e technology
also eliminates the expensive wet cleaning steps needed by multi-layer
resist processes.
The APF optically engineered patterning film stack combines the
chemical vapor deposition of an amorphous carbon APF or APF-e hardmask
with Applied's dielectric anti-reflective coating (DARC) film to enable
advanced lithography and etching using standard lithography tools.
Applied's APF films are already being used in up to seven layers in
70nm Flash memory chips, including shallow trench isolation and
sub-40nm gate definition, plus other key applications. Even more layers
are likely to be implemented in next-generation devices.
Dr. Farhad Moghadam, senior vice president and general manager of
Applied Materials' Thin Films Product Business Group, comments: "Our
first-generation APF film is one of the industry's most successful CVD
applications and has had a major impact on customers' ability to move
to 90nm and below dimensions. The new APF-e film enables customers to
cost-effectively pattern nano-scale features without additional
integration complexity, while reducing their reliance on
next-generation lithography solutions."
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