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14th Edition: The SiGe:C Epitaxy Process in Manufacturing |
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Feb 02, 2005 at 05:39 PM |
JILL C. HILDRETH, JEFFREY A. CHAN, ANDREW S. MORTON & HEATHER KRETZSCHMAR, Motorola Inc., Chandler, AZ, USA
ABSTRACT
To meet the high-frequency demands of today's wireless market, SiGe:C
heterojunction bipolar transistors have grown in popularity. This need
for speed has forced the novel process of SiGe:C epitaxy out of the
development laboratory and onto the factory floor. Not only must the
SiGe:C process meet device and product specifications, but to be cost
effective, it must include a process and tool monitoring plan that can
be executed around the clock by manufacturing personnel. Described
within is a methodology for manufacturing SiGe:C films with
industry-leading film quality using a reduced-pressure CVD reactor for
deposition. Use of this methodology has enabled Motorola to qualify
SiGe:C for production on a 0.35 µm BiCMOS platform.
 The SiGe:C Epitaxy Process in Manufacturing
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Wafer Processing 