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Embedded memory on SOI set for expansion |
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May 31, 2006 at 12:52 PM |
 Renesas Technology is licensing its capacitor-less Twin Transistor RAM (TTRAM) technology that was launched in September 2005 to US based, Emerging Memory Technologies in an effort to expand the IP model for the novel technology.
"SOI CMOS is set to expand from the high-performance microprocessor segment into the broad CMOS semiconductor market," said Sreedhar Natarajan, president and CEO, Emerging Memory Technologies Inc.
The TTRAM memory cell uses two transistors which are serially connected onto the SOI substrate, eliminating the need for a metal-insulator-metal capacitor, as per conventional CMOS processes. There is also no requirement for negative or step-up voltage allowing scaling beyond the 65nm node while providing better low voltage operation within SoC designs.
"Customers require high-density memory solutions without compromising design trade-offs in area, performance and power," stated Dr. Kazutami Arimoto, Deputy General Manager of System Core Technology Division at Renesas Technology Corp.
"After licensing the TTRAM technology based memory IP from EMT, embedded memory users will soon be able to benefit from the high-density, cost-effective solutions that were previously only available in bulk CMOS. We are expecting further SOI memory applications growth by combining our TTRAM technology and EMT's excellent memory compilation technology."
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