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Double exposure immersion lithography cost complaints |
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May 26, 2006 at 11:43 AM |
 The most recent SEMATECH-led Litho Forum, an invite only event for around 100 of the top lithography experts in the semiconductor industry are reported to have confirmed that they expect 193nm ArF immersion lithography to pattern critical layers at the 45nm half-pitch node in 2009 as well as continue at the 32nm half-pitch 2012.
"The surveys indicated an aggressive adherence to the half-pitch targets identified by the International Technology Roadmap for Semiconductors (ITRS)," said Michael Lercel, SEMATECH Lithography director and conference chair. "However, cost concerns for new approaches are in the forefront of many people's minds."
This is in respect to double patterning that could be necessary at the 32nm node should EUV Lithography not be ready for volume production in that time frame. EUVL was deemed the only choice at the 22nm node as concerns have arisen over the extendibility of immersion to higher NA's that will require higher index fluids and lenses.
Although other technologies such as maskless lithography and nano-imprinting technology were reviewed at the forum, it would seem that optical lithography will continue to be the preferred choice through to the 22nm node.
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