The program aims to demonstrate the actual ability to introduce Ge and III-V materials into CMOS process flows that will allow scaling beyond 22nm. The program will also focus on possible applications of the R&D work in the field of photonics.

The research will be performed on Riber's ultra-high vacuum molecular beam epitaxy cluster system for 200mm that includes a III-V compound growth chamber and a metal/oxide deposition chamber. The tool will allow IMEC to deposit compound semiconductor layers on GeOI or other Ge substrates and deposition of high-k dielectrics and metal gates on Ge and on III-V materials.

SEMATECH has also announced that it will co-ordinate research in the same field for its customers via a DARPA funded University affiliation program.