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Home arrow Wafer Processing arrow Articles arrow Edition 15 arrow 15th Edition: Innovative Metal Lift-Off Process Using Dry C...
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15th Edition: Innovative Metal Lift-Off Process Using Dry Carbon Dioxide1 Print E-mail
Feb 02, 2005 at 04:25 PM

MARTIN EMRICH, MACROTRON Systems GmbH, Munich, Germany PAUL MILLER, DOUG PRICE & CHARLES BOWERS, Eco-Snow Systems, Inc., Livermore, CA, USA

ABSTRACT

A "dry" carbon dioxide process has been investigated as a replacement for conventional solvent and deionised-water spray techniques for metal lift-off process steps. Results show that wafer yield is improved as a result of reduced electrical degradation and particle density. We also observe reductions in contact resistance between the interconnect metal and ohmic metal layers of greater than 20%.


icon 14 - Innovative Metal Lift-Off Process Using Dry Carbon Dioxide1
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