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The SiGe:C Epitaxy Process
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JILL C. HILDRETH, JEFFREY A. CHAN, ANDREW S. MORTON & HEATHER KRETZSCHMAR, Motorola Inc., Chandler, AZ, USA
ABSTRACT
To meet the high-frequency demands of today’s wireless market, SiGe:C heterojunction bipolar transistors have grown in popularity. This need for speed has forced the novel process of SiGe:C epitaxy out of the development laboratory and onto the factory floor. Not only must the SiGe:C process meet device and product specifications, but to be cost effective, it must include a process and tool monitoring plan that can be executed around the clock by manufacturing personnel. Described within is a methodology for manufacturing SiGe:C films with industry-leading film quality using a reduced-pressure CVD reactor for deposition. Use of this methodology has enabled Motorola to qualify SiGe:C for production on a 0.35 μm BiCMOS platform.
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