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Powerchip breaks ground on major fab complex |
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Apr 03, 2006 at 10:49 AM |
 Powerchip Semiconductor (PSC) has broken ground on the company's largest fab complex to date. The Taiwanese based memory producer has started ground work on two 300mm facilities simultaneously, which will each be capable of between 30,000 and 40,000wspm when fully utilised.
The new fabs are part of a cluster PSC is claiming it will build at the Central Taiwan Science Park, Taichung that includes another two fabs within the plan. The company is estimating the total investment for the four fabs will cost in the region of $9.0 billion US dollars. The fabs have been named as Fab 12C, 12D, 12E and 12F.
PSC operates two 300mm fabs currently with the expectation that only one of the new fabs will have tools installed when the cleanroom is finished. The company has had a good record in ramping its fabs and building facilities in advance of capacity requirements.
With the recent purchase of a shuttered 300mm fab from Macronix, PSC is expecting to reach 100,000wspm capacity by the end of 2006. The company will ramp both DRAM and NAND Flash devices, taking the company away from dependence on DRAM.
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