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Chartered, IBM and Samsung raise the bar in yield assisted process platforms |
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Mar 30, 2006 at 06:03 PM |
 Chartered Semiconductor, IBM and Samsung Electronics have launched their ‘Common Platform' suite of products for volume foundry production at the 65nm node.
The alliance are emphasizing that the collaboration with suppliers and
between themselves is unprecedented, resulting in "new levels of
insight into the shared manufacturing processes available to
customers," a press release stated.
"We have created a differentiated solution empowering customers by allowing them to make relevant tradeoffs early on in the design cycle," stated Steve Longoria, vice president, Semiconductor Technology Platform for IBM Systems and Technology Group. "Through our jointly developed robust qualification processes, we have been and continue to evaluate the best industry tools for our growing DFM suite. The capabilities we can collectively deliver to our mutual clients address head-on the most critical issues and challenges for developing designs that will be manufacturing-friendly in leading-edge process technologies."
"By expanding our cooperation in 65nm process development and design enablement to include DFM flows and tools for the Common Platform technology, we continue to improve on the design compatibility across our fabs at the GDS level to include design optimization for higher yields," said Ana Hunter, vice president of technology for Samsung Semiconductor, Inc. "Depending on a customer's preference, these tools can be integrated directly in their design flow or offered as a service by any of the Common Platform technology companies."
The team of suppliers products that are included in the ‘kit' include Cadence Design Systems, Inc., Clear Shape Technologies, Magma Design Automation, Mentor Graphics, Ponte Solutions, and Synopsys, Inc. Ponte only officially announced one of its products yesterday!
The 65nm Common Platform is designed to enable higher yields at tapeout with faster volume production ramps and yield learning.
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