BRUNO GEOFFRION, ANJANA PATEL, STEVE KIM, MUHAMED RASHEED, NAREN DUBEY, KEN LAI, JOE D'SOUZA, PADDY KRISHNARAJ & MANOJ VELLAIKAL, Applied Materials, Santa Clara, CA, USA

Anew 300 mm HDP-CVD process has been designed to meet the requirements of the 0.10 µm technology node and below. Processes have been developed for shallow trench isolation (STI), pre-metal dielectric (PMD) and inter-metal dielectric (IMD) gap filling that meet 0.10 µm technology node requirements. This article examines the HDP-CVD process improvements and their impact on gap fill and productivity at sub-0.10 µm with aspect ratios greater than 6:1.

 08 - New HDP-CVD Technology for Next-Generation Gap Fill Processes