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15th Edition: Evaluation of Brush Post-CMP Cleaning of Thermal Oxide Wafers |
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Feb 02, 2005 at 03:54 PM |
SHIVA RAMACHANDRAN, Clarkson University, Potsdam, NY, USA
AHMED A. BUSNAINA, Northeastern University, Boston, MA, USA
ROBERT SMALL & CASS SHANG, EKC Technology, Hayward, CA, USA
ABSTRACT
In
this article, an investigation of brush cleaning of post-CMP wafers
using a chelating basic chemistry is presented. Silica slurry particles
were deposited on the wafer surface by dipping. The effect of brush
speed, pressure and cleaning time on cleaning is described. The
cleaning efficiency was found to be near 100% over most of the range of
parameters investigated.
 02 - Evaluation of Brush Post-CMP Cleaning of Thermal Oxide Wafers Using Chelating Basic Chemistry
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Wafer Processing 
