|
Buffalo U tackles atomic migration roadblocks |
|
|
|
Feb 23, 2006 at 05:19 PM |
 New York State University at Buffalo (UB) researchers are using computer simulations and laboratory experiments to devise ways to lessen or stop electromigration and thermomigration in nanoscale electronic device with support from a $250,000 US National Science Foundation (NSF) grant. Engineers from Intel are collaborating with the UB researchers, Cemal Basaran, Ph.D., and David Kofke, Ph.D.
The terms electromigration and thermomigration describe the tendency for atoms to behave erratically when charged by the very high density electrical currents required to power super-small and super-powerful electronic devices.
High electrical current densities and high temperature gradients create voids within metal conductors, the researchers explain. This leads to breakdowns in circuitry and results in device failure. Moreover, as electronic devices and their circuits get smaller -- down to the nanoscale -- the damaging effects of electromigration and thermomigration increase.
"Once we learn to stop this self-destructive process in metals, any component in a computer chip can be made at the nanoscale," says Basaran. "But unless you solve this problem, you cannot have fast-performing nanoelectronic devices, and further miniaturisation in electronics may not be possible."
Working at the nanoscale level, the researchers intend to build semiconductor devices one atom at a time. According to Basaran, controlling placement of atoms in a material will give the researchers precise control of their properties, thus reigning in the erratic behaviour that causes system breakdown.
"When you design materials at the atomic scale you get properties you wouldn't get otherwise," Basaran says. "You get exact properties that you want instead of what nature dishes out for you. This means you can do things with a material that you couldn't imagine doing before with the same material."
The goal of the UB researchers is to design nanoscale chips, circuits and solder joints that can withstand very high current densities and very high temperature gradients.
"High current density changes everything," Basaran says. "It makes everything faster and more powerful. If you want a faster computer you need higher current density."
Today's computers operate at a maximum density of 1000A/cm2. The UB researchers hope that their work may one day enable computers to operate with a current density 1000 times greater.
By Dr Mike Cooke
Picture: University of Buffalo researchers Cemal Basaran, Ph.D., Professor, Director of Graduate Studies, and Director of Electronic Packaging Laboratory (right) and David A. Kofke, UB Distinguished Professor, Director of Undergraduate Studies (left).
|
News 
