Product Briefing Outline: Invarium, Inc has unveiled
"DimensionPPC," which it claims to be the industry's first unified,
full-chip Process and Proximity Compensation (PPC) product for
patterning integrated circuit (IC) layouts at 65 nm and below.
Architected from the ground up as a new-generation layout-to-mask
solution, DimensionPPC is intended to overcome the deficiencies of
today's RET/OPC tools and layout correction techniques for other
process effects, from mask through etch. The product has been
fab-validated at 65nm during the fourth quarter of 2005. The technology
is currently in production deployment at one customer site and is being
qualified for production use by five additional leading semiconductor
manufacturers.
Problem: With each successive technology
node, patterning becomes more challenging and requires significantly
greater help from software to augment hardware and process limitations.
Thus far, the industry has coped well with existing RET/OPC tools that
were conceived multiple nodes ago. At 90 nm, however, the first serious
bottlenecks appeared, necessitating considerable additional efforts by
lithography/DFM engineers to extend the current tools to this node. At
65 and 45nm, an entirely new level of analytical capabilities and
software rigor is required to achieve the best possible patterning
results and efficiently transition from layout completion to volume
production. Invarium's DimensionPPC is engineered specifically for
these advanced nodes and is built on a technology foundation with a
vision to 32nm and EUV lithography.
Solution:
DimensionPPC is patterning-process-centric technology. It is comprised
of a powerful PPC model and an advanced mask layout synthesis engine.
The PPC model is a rigorous, analytical model of the entire patterning
process that captures all key process effects and process variations
with any significant impact on pattern fidelity, without requiring the
creation of multiple models for different process conditions. The model
enables an accurate simulation of how an IC layout will be patterned
post-etch and across the process window. The mask layout is then
optimally synthesized in a single, unified step that embodies RETs and
inversions of actual process effects to ultimately produce a mask that
delivers the best patterning results on silicon. The product's
"correct- by-construction" approach is claimed to cut the cycle time
from layout completion to volume production by simplifying the tape-out
flow, reducing RET/OPC missteps, and averting needless mask and silicon
re-spins. DimensionPPC is designed to reduce overall costs by reducing
mask iterations and software investment costs, and eliminating the need
for independent OPC verification.
Applications: 65nm and below
Platform:
DimensionPPC was architected for high scalability, and runs on standard
computer clusters and distributed processors, providing fast turnaround
times (TAT) without requiring custom hardware.
Availability: February 2006 onwards.