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Home arrow Product Briefings arrow Wafer Processing arrow New Product: KLA-Tencor extends e-beam performance on new eS32 platform
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New Product: KLA-Tencor extends e-beam performance on new eS32 platform Print E-mail
Feb 06, 2006 at 09:45 AM
ImageOutline: KLA-Tencor has introduced the eS32 e-beam inspection platform.  The eS32 enables the industry's widest capture of subtle electrical and small physical defects, which are arising as chipmakers integrate numerous new materials and device architectures into volume production. In addition to providing a proven BEOL solution, the eS32 offers the wide range of imaging conditions required to capture the growing number of yield-limiting FEOL defect types. Volume shipments of the eS32 are underway, according to the company. Problem: Today, with the fast feedback provided by e-beam inspection, logic manufacturers can identify and overcome FEOL issues in integrating nickel silicide (NiSi) and strained silicon into their devices.  Furthermore, the eS32 is architected to meet the yield challenges that chipmakers are likely to encounter as they address device speed and power consumption concerns. DRAM manufacturers face shorter product lifecycles and, therefore, are increasingly focused on ramping new processes into high volume production.  As these manufacturers scale to increasingly smaller cells, they face critical FEOL and interconnect challenges-from inspecting higher aspect ratio vias and capacitors to addressing the increasing yield impact of small physical defects.  The eS32 can help to promptly identify critical defect mechanisms impacting DRAM manufacturers.

Solution: The eS32 incorporates important advancements in physical and voltage contrast sensitivity to enable faster time to root cause.  Landing energy range has been extended to enhance capture of slight under-etch contact defects.  New beam current and scanning flexibility options have been designed for use on highly resistive materials, and to capture the growing array of subtle buried shorts associated with NiSi and strained silicon integration. The capture of small physical defects in dense, high aspect ratio structures has been improved with the addition of a smaller pixel.  To help chipmakers accelerate root cause analysis and identify and resolve new systematic defect mechanisms, the eS32 is integrated with advanced binning algorithms.  The eS32 also supports KLA-Tencor's proprietary "MicroLoop" methodology, which the company claims can accelerate yield learning by 50 percent.

Applications: Defects, electrical & physical for FEOL & BEOL 65nm and below.

Platform: The eS32 has enhanced ease-of-use capabilities, such as auto-calibration for imaging conditions, allow the system to be quickly and smoothly integrated into production.  

Availability:
January 2006 onwards.
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