Kevin Monahan & Brian Trafas, KLA-Tencor Corporation, Milpitas, California, USA

ABSTRACT

Immersion lithography at 193 nm has emerged as the leading contender for critical patterning through the 32-nm technology node. Super-high NA, along with attendant polarization effects, will require reoptimization of virtually every resolution enhancement technology and the implementation of advanced process control at intrawafer and intrafield levels. Furthermore, interactions of critical dimensions, profiles, roughness, and overlay between layers will impact design margins and become severe yield limiters.