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28th Edition: Front end surface preparation challenges and solutions for 65 and 45nm nodes |
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Dec 14, 2005 at 04:57 PM |
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Jagdish Prasad, AMI Semiconductor, Pocatello, ID, USA ABSTRACT There are only minor changes in mateirals and structures at 65nm and therefore very little change in cleaning strategy for FEOL will be needed. Dedicated single-wafer tools for critical process steps may be needed to avoid crosscontamination. However, dedicated tools to all FEOL processes may be cost prohibitive and therfore it will be necessary to understand the processes that will require dedicated tools. Dilute and batch process will still be the process of choice for DRAM manufacturers but more single-wafer tools may be used by logic device manufacturers.
28th Edition: Front end surface preparation challenges and solutions for 65 and 45nm nodes
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