C. Wyon, CEA-LETI, Crolles, France, J.P. Gonchond, J. Bienacel & P. Normandon, STMicroelectronics, Crolles, France, M. Hopstaken, R. Delsol, & L.F.Tz. Kwakman, Philips Semiconductors, Crolles, France

ABSTRACT

X-ray metrology techniques, which are hereafter defined as techniques using X-rays as the incident probe beam, are quickly moving from offline characterization laboratories to semiconductor fabrication lines. This article reviews applications of some X-ray metrology techniques to monitor FEOL and BEOL processes for the development of d65nm technology nodes. In-line control of ultrathin nitrided gate oxides is performed using XPS, while the development of high-k dielectrics can be accelerated using XRR and XRF. XRR is used for controlling the formation of NiSi thin films, as well as the individual thickness of Ta/TaN barrier layer. Monitoring of Cu interconnects texture is realized using XRD. Combined XRR and SAXS can provide valuable information about the porosity and pore-size distribution of ultra low-k layers.