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Fujitsu to groundbreak on second 300mm fab in April 06 |
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Jan 11, 2006 at 10:06 AM |
 Fujitsu has sighted continued strong demand and long-term business
trends for its IC's as key reasons it is investing 120 billion Yen
($1.05 billion US dollars) in a second 300mm fab in Mie Prefecture,
Japan. Groundbreaking is planned for April 2006 and tool install by
March 2007. Fujitsu expects volume production using both 90nm and 65nm
processes in July 2007, highlighting a very aggressive ramp rate for
the new fab, dubbed 300mm Fab No 2.
Fab No 2 will have an initial ramp to 10,000 wafer starts per month
(wspm) with a maximum capacity of 25,000wspm. Fujitsu's 300mm Fab No 1
also in Mie Prefecture will reach 15,000wspm by April this year, a year
after production began.
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