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Voltaix gains grant to commercialize low temp SiGe precursors |
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Jan 04, 2006 at 01:00 PM |
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Voltaix, Inc., has been awarded a grant
from the National Science Foundation (NSF) SBIR/STTR Program to commercialize a
new family of low temperature silicon-germanium (SiGe) precursors the company
licensed from Arizona State University in September 2005. The value of the
grant was not disclosed.
"Our customers need new materials-based
solutions to achieve their technology development goals," stated Dr. John de
Neufville, President of Voltaix. "The sponsorship of the NSF enables us to
bring this solution to our customers more quickly and extends our leadership in
SiGe technology."
The grant provides support of the
project "STTR Phase I: Germyl Silanes - Enabling
Precursors for Chemical Vapor Deposition of Advanced CMOS Substrates,
CMOS-Integrated MEMS, and Nano-Scale Quantum-Dot Silicon
Photonics." The funds will support development efforts at Voltaix and
ASU.
The germanium-rich precursors have been
specifically designed to allow deposition below 500 oC that contain
less than 106 dislocations/cm2.
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