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Home arrow News arrow Cleanroom arrow Microns Lehi fab to ramp late 06
Microns Lehi fab to ramp late 06 Print E-mail
Jan 04, 2006 at 12:59 PM
Micron highlighted during its 1Q06 financial conference call with analysts last month that it plans to start the production ramp of its mothballed 300mm fab in Lehi, Idaho by the end of 2006. The fab will become Micron's second only 300mm facility and will be dedicated to NAND Flash production as part of the newly created joint venture with Intel Corp, IM Flash Technologies. The Lehi facility, according to Micron will have a designed maximum capacity of 11,000 wafer starts per week or 44,000 wafer starts per month when fully ramped.

Production of NAND Flash will also begin at Micron's other 300mm fab in Manassas, Virginia by the end of 2006, which currently is producing the majority of the company's advanced DRAM memory chips.

Company executives highlighted that the Manassas fab would achieve capacity of 7,000wspw or 28,000wspm of mixed memory production by early 2007. Micron's advanced 200mm fab in Boise, Idaho would also be used for NAND production though output would be limited to the wide range of products already manufactured at the facility and the lack of significant capacity to add further flexibility.

The NAND Flash JV will spend around $500 million on capital equipment and cleanroom facilities at Lehi in the current financial year while Micron plans to spend $1.5 billion on capex to boost production at all of its main facilities in the year.

With the JV purchasing half of Micron's NAND Flash capacity at production costs, starting in early 2006, Micron is expected to take a hit on revenues and capacity expansion until the second half of the year. However, Micron executives reiterated that they expected R&D savings in the region of $100 million US dollars this year due to the sharing of NAND Flash development costs with Intel.

Micron's production plans, reveal that the company is continuing to diversify away from commodity DRAM production even within existing leading edge fabs such as Manassas.

Steve Appleton, Micron's President & CEO was cautious in his comments regarding Samsung and Hynix also shifting production away from DRAM towards NAND Flash production. "Is there a shift going on," he questioned in response to analyst questions on DRAM supply & demand.

Micron's move to become a larger supplier of NAND Flash is based on its estimates that the memory type will have a compound average growth rate of 118 percent through 2007 with margins higher than those from DRAM production.  


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