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Home arrow News arrow Wafer Processing arrow Freescale claims breakthrough in 90nm non-volatile memory
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Freescale claims breakthrough in 90nm non-volatile memory Print E-mail
Nov 28, 2005 at 07:44 PM
Freescale Semiconductor has claimed that it has successfully fabricated a 24-Mbit memory array using non-volatile technology at the 90nm node with bulk CMOS. This is the first time this has been achieved, according to the company. The 24-Mbit memory array was manufactured at Freescale's Austin Technology & Manufacturing Center.




"The industry anticipates that conventional embedded flash memory technology will reach its scaling limit within the next four years due to high-operating voltage, fabrication process complexity and cost," said Freescale Chief Technology Officer Dr. Claudine Simson. "A viable alternative is crucial for key suppliers to automotive, wireless and consumer markets to continue to scale their products and add new functionality. Silicon nanocrystal technology offers lower operating voltages, reduced memory module size, simpler process flow and lower manufacturing costs. Additionally, it requires no new materials or wafer fabrication equipment, allowing for immediate compatibility with existing production wafer fabs. By demonstrating that silicon-nanocrystal memories can be reliably produced at higher densities, we have taken yet another step in establishing technology leadership in the embedded non-volatile memory market."

Silicon nanocrystal memories are more scaleable than conventional floating gate-based flash technology, as their tunnel oxide thickness can be reduced without impacting data retention. The charge is stored on isolated nanocrystals and is lost only from those few nanocrystals that align with defects in the tunnel oxide - while the same defects would result in significant charge loss from a conventional floating gate. A thinner tunnel oxide permits lower-voltage operation, substantially reducing the memory module area needed to generate the bit-cell programming voltages, and allowing for significant wafer processing simplifications and manufacturing cost reductions.

"Silicon nanocrystal storage is a promising alternative to industry-standard embedded NOR memory, as it offers the capability of lowering both the size and cost of the device," said Semico Analyst Jim Handy. "Freescale's achievement is a key development in the introduction of the 'faster, cheaper' memory that the semiconductor industry increasingly requires."






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