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9th Edition: 193 nm Microlithography and DUV Light Source Design Print E-mail
Nov 04, 1998 at 11:40 AM

Bernd Nikolaus, Olivier Semprez, Gerry Blumenstock, Palash Das, Cymer, Inc., San Diego, CA, USA

ABSTRACT 

While 248 nm KrF-excimer lasers have successfully enabled the sub-quarter micron technology, the semiconductor industry is preparing for the next step in optical lithography using 193 nm ArF lasers. Optics and toolmakers are facing new challenges at 193 nm that were hitherto not experienced at 248 nm. Some of these challenges are optical damage of 193 nm coatings and materials, and the necessity to use large calcium fluoride lenses. Cymer, as the leading supplier of 248 nm illumination source, is exploring new design concepts and aggressively shifting the standards of ArF lasers to match the performance, cost and lifetime requirements of next generation 193 nm exposure tools.

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9th Edition: The Development of Step and Scan Print E-mail
Nov 04, 1998 at 11:38 AM

Dr. Harry Sewell, SVG Lithography Systems, Inc., Wilton, CT, USA

The demand for high-performance microprocessors and memory chips is challenging manufacturers to deliver high-clock-speed devices. The yield achieved with these high-value devices is a significant factor in the economics of semiconductor manufacture.


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9th Edition: Metrology Issues in the Age of Next Generation Lithography Print E-mail
Nov 04, 1998 at 11:36 AM

S. A. Rizvi, Photronics Inc., Milpitas, CA, USA

ABSTRACT 

The role of metrology with the advent of next generation lithography is going to be even more crucial than ever before. One reason is of course the high degree of tolerance demanded of the continued shrinking features; but then there are other factors that make the new metrology even more challenging. Features made of new materials may respond differently to the measuring instruments ; this may especially be true in the case of masks that are made for different types of lithographic systems. Physics involved in different types of measurement techniques can also provide outputs that may be difficult to correlate. Most importantly it is the lack of a sound statistical basis for handling nano and sub-nano metrology that presents potential difficulties in coming years. This paper explores areas of metrology that, though ignorable in the past, are beginning to play a significant role when required to support the New Generation Lithography.

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