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Apr 12, 2007 at 12:24 PM |
 KLA-Tencor and Clear Shape Technologies have started a collaboration that is intended to improve chip yields. The work will focus on understanding a photomask defect's effect on final silicon electrical performance. The two companies expect this collaboration to enable customers to achieve improved device yield and, ultimately, faster production ramp for the most advanced designs.
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Apr 10, 2007 at 05:27 PM |
 Clear Shape Technologies and Lightspeed Logic plan to jointly develop solutions to reduce lithography and stress-related variability in photomasks specifically for Lightspeed Logic's mask reconfigurable IP at both the 65nm and 45nm nodes.
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Mar 30, 2007 at 03:02 PM |
 Toppan has received a "Best Partner" award among overseas suppliers from Samsung Electronics suppliers, and is the only photomask supplier to receive this award, the company said. According to Toppan, its integrated global network of facilities was a key factor in receiving the award and the third consecutive year the photomask supplier has been listed in Samsung's annual supplier awards.
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Mar 13, 2007 at 10:01 AM |
 Powerlase and its research partner, the University of Central Florida, have combined two lasers to create a laser produced plasma (LPP) extreme ultraviolet (EUV) light source. Further research is planned to develop this EUV litho (EUVL) approach into a workable solution for high volume manufacture of semiconductor chips by 2009.
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Mar 09, 2007 at 02:21 PM |
 In the wake of disappointment over the slow progress of EUV lithography, renewed efforts to extend 193nm Arf immersion lithography below the 32nm half-pitch node, whether in single or double patterning mode, are heavily dependent on a host of novel materials, according to SEMATECH.
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Mar 08, 2007 at 04:16 PM |
 ASML Holding NV has completed its acquisition of Brion Technologies in an all-cash transaction valued at $270 million US dollars, the company announced.
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Mar 02, 2007 at 09:36 AM |
 Rensselaer Polytechnic Institute (RPI) scientists have produced an optical coating with almost the same refractive index as air (Nature Photonics, March 2007). This means that its light reflection properties are practically zero. RPI claims a world record by decreasing the reflectivity compared to conventional anti-reflection coatings by an order of magnitude.
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Mar 01, 2007 at 02:29 PM |
 Less than six months after taking delivery of the world's first full-field extreme ultraviolet (EUV) research and development tool (an "alpha demo tool", ADT), the College of Nanoscale Science and Engineering (CNSE) of the University at Albany announced the world's first exposed images while using the tool in a development environment.
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Feb 28, 2007 at 04:47 PM |
 Energetiq Technology's EQ-10 extreme ultraviolet (EUV) light source is being used on a new experimental tool developed by CEA-Leti in studies to characterize photoresist outgassing during exposure in EUV lithography processes. The 10W EUV source uses Energetiq's patented Electrodeless Z-Pinch technology.
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Feb 28, 2007 at 04:24 PM |
 Nikon Corporation claims shipment of the world's first immersion lithography system capable of 45nm production. The NSR-S610C, an ArF immersion scanner with a projection lens numerical aperture (NA) of 1.30, shipped to a major IC manufacturer. Nikon claims the NA value is the highest in the industry.
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Lithography 
