|
Sep 27, 2005 at 09:25 PM |
Product Briefing Outline: Carl Zeiss SMT has unveiled
its new ‘Starlith 1700I' lens for immersion lithography at 193nm
wavelength. Starlith 1700i offers a Numerical Aperture (NA) of 1.2, the
highest NA available, according to the company. It allows IC volume
production at 45nm design rules. The highest NA of 1.2 can be used over
a field size of 26x33mm.
Write Comment (0 comments) |
|
Read more...
|
|
|
Feb 17, 2005 at 12:00 AM |
Product Briefing Outline: Applied
Materials, has launched the "Applied ALTA 4700" Mask Pattern Generation
system, which the company claims is the industry's lowest
cost-of-ownership solution for the volume manufacturing of all 90nm and
most 65nm critical mask layers. In addition to providing up to a 4x
write-time advantage over competing e-beam systems, the laser-based DUV
ALTA 4700 system features a 42x, 0.9 NA objective lens that
dramatically boosts mask resolution, pattern fidelity, critical
dimension control and placement performance.
Write Comment (0 comments) |
|
Read more...
|
|
|
Feb 04, 2005 at 11:00 PM |
Product Briefing Outline: FEI has released the what it
believes to be the industry's firstever "DualBeam" mask repair system
designed to repair photolithography mask defects for the 65 nm node.
Combining both a focused ion beam (FIB) column and an environmental
scanning electron microscope "ESEM" in a single system, the new "Accura
XT+," is a solution that can accommodate both today's photomasks and
extend to a broad set of next-generation lithography technologies.Write Comment (0 comments) |
|
Read more...
|
|
|
Feb 04, 2005 at 10:00 PM |
Product Briefing Outline: Soluris, a manufacturer of
CD-SEMs (Critical Dimension Scanning Electron Microscopes) for advanced
semiconductor manufacturing, has launched the new Yosemite SP-1000.
Measurement throughput as high as 1,000 sites per hour and clear
imaging at the bottom of high aspect ratio contact holes has been
claimed. The system retains Ultra Low Voltage and 3-D model-based
Critical Shape Metrology required at and below 65 nm.Write Comment (0 comments) |
|
Read more...
|
|
|
Feb 04, 2005 at 09:00 PM |
Product Briefing Outline: Tokyo Ohka Kogyo Co (TOK)
has developed a process based on a new concept applying Shrink Assist
Film for Enhanced Resolution (SAFIER). SAFIER makes possible
microprocessing a generation ahead even while using today's exposure
wavelengths, according to the company.Write Comment (0 comments) |
|
Read more...
|
|
|
Feb 04, 2005 at 08:00 PM |
Product Briefing Outline: Molecular
Imprints' new " Imprio 250" nano-imprint system uses Step and Flash
Imprint Lithography "S-FIL" technology. The Imprio 250 offers sub-50 nm
half-pitch resolution, sub-10 nm alignment, as well as integrated
magnification control, and delivers high resolution and precision
alignment for customers seeking cost-effective lithography.
Write Comment (0 comments) |
|
Read more...
|
|
|
Feb 04, 2005 at 07:00 PM |
Product Briefing Outline: Donaldson Company has launched the
"Filter Life Estimator," a new web-based tool that enables
semiconductor fabricators using ASML Lithography Tools to plan filter
maintenance schedules based on the contaminant mix in their particular
operation. Write Comment (0 comments) |
|
Read more...
|
|
|
Feb 04, 2005 at 06:00 PM |
Product Briefing Outline: Nikon Corporation has
developed "POLANO," (Polarization Optimization for Lithographic Advance
in NSR Optics) a polarized illumination system that improves image
contrast by 20 percent in order to realize a half-generation advance in
resolution. Beginning in the Spring of 2005, plans are to offer POLANO
as an option on the NSR-S308F, Nikon's latest model ArF excimer
stepper, which will start shipping in December of 2004.Write Comment (0 comments) |
|
Read more...
|
|
|
Feb 04, 2005 at 05:00 PM |
Product Briefing Outline: Nikon continues its focus on
high productivity lithography solutions with the introduction of the
NSRS208D, an advanced KrF scanner with 25% higher throughput and
extremely low cost of ownership. Customers can use the system for mass
production of 110 nm or smaller devices. The system combines a high NA
projection lens (0.82 NA) with a newly developed, high productivity
platform that enables dramatic improvements in alignment. Alignment
accuracy was reduced to 10 nm or less, a 33% improvement over Nikon's
previous generation KrF scanner.Write Comment (0 comments) |
|
Read more...
|
|
|
Feb 04, 2005 at 04:00 PM |
|
Product Briefing Outline: Extraction has introduced what it claims is
the industry's first complete toolset for detecting and measuring
lithography molecular contamination at ultra low levels. Extraction's
new tools - the TMB-193 and the LithoScout - fully address the
industry's need for both continuous and periodic monitoring of
molecular contamination in 193nm environments.Write Comment (0 comments) |
|
Read more...
|
|
|
<< Start < Previous 1 2 3 4 5 6 Next > End >>
|
| Results 71 - 80 of 80 |