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Lithography Product Briefs
Catadioptric inline multi mirror lens system for immersion lithography Print E-mail
Sep 27, 2005 at 09:25 PM
ImageProduct Briefing Outline: Carl Zeiss SMT has unveiled its new ‘Starlith 1700I' lens for immersion lithography at 193nm wavelength. Starlith 1700i offers a Numerical Aperture (NA) of 1.2, the highest NA available, according to the company. It allows IC volume production at 45nm design rules. The highest NA of 1.2 can be used over a field size of 26x33mm.

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Laser mask writer takes on 65nm critical layers Print E-mail
Feb 17, 2005 at 12:00 AM
ImageProduct Briefing Outline: Applied Materials, has launched the "Applied ALTA 4700" Mask Pattern Generation system, which the company claims is the industry's lowest cost-of-ownership solution for the volume manufacturing of all 90nm and most 65nm critical mask layers. In addition to providing up to a 4x write-time advantage over competing e-beam systems, the laser-based DUV ALTA 4700 system features a 42x, 0.9 NA objective lens that dramatically boosts mask resolution, pattern fidelity, critical dimension control and placement performance.
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Total repair solution for advanced photomasks Print E-mail
Feb 04, 2005 at 11:00 PM
ImageProduct Briefing Outline: FEI has released the what it believes to be the industry's firstever "DualBeam" mask repair system designed to repair photolithography mask defects for the 65 nm node. Combining both a focused ion beam (FIB) column and an environmental scanning electron microscope "ESEM" in a single system, the new "Accura XT+," is a solution that can accommodate both today's photomasks and extend to a broad set of next-generation lithography technologies.Write Comment (0 comments)
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High productivity on high aspect ratio contract holes Print E-mail
Feb 04, 2005 at 10:00 PM
ImageProduct Briefing Outline: Soluris, a manufacturer of CD-SEMs (Critical Dimension Scanning Electron Microscopes) for advanced semiconductor manufacturing, has launched the new Yosemite SP-1000. Measurement throughput as high as 1,000 sites per hour and clear imaging at the bottom of high aspect ratio contact holes has been claimed. The system retains Ultra Low Voltage and 3-D model-based Critical Shape Metrology required at and below 65 nm.Write Comment (0 comments)
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Shrink assist resist Print E-mail
Feb 04, 2005 at 09:00 PM
ImageProduct Briefing Outline: Tokyo Ohka Kogyo Co (TOK) has developed a process based on a new concept applying Shrink Assist Film for Enhanced Resolution (SAFIER). SAFIER makes possible microprocessing a generation ahead even while using today's exposure wavelengths, according to the company.Write Comment (0 comments)
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Cost-effective sub-50 nanometer lithography using step and flash nano-imprinting Print E-mail
Feb 04, 2005 at 08:00 PM
ImageProduct Briefing Outline: Molecular Imprints' new " Imprio 250" nano-imprint system uses Step and Flash Imprint Lithography "S-FIL" technology. The Imprio 250 offers sub-50 nm half-pitch resolution, sub-10 nm alignment, as well as integrated magnification control, and delivers high resolution and precision alignment for customers seeking cost-effective lithography.
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Filter life estimates gain online web assistance Print E-mail
Feb 04, 2005 at 07:00 PM
ImageProduct Briefing Outline: Donaldson Company has launched the "Filter Life Estimator," a new web-based tool that enables semiconductor fabricators using ASML Lithography Tools to plan filter maintenance schedules based on the contaminant mix in their particular operation.
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Polarized illumination system give 20% resolution gain Print E-mail
Feb 04, 2005 at 06:00 PM
ImageProduct Briefing Outline: Nikon Corporation has developed "POLANO," (Polarization Optimization for Lithographic Advance in NSR Optics) a polarized illumination system that improves image contrast by 20 percent in order to realize a half-generation advance in resolution. Beginning in the Spring of 2005, plans are to offer POLANO as an option on the NSR-S308F, Nikon's latest model ArF excimer stepper, which will start shipping in December of 2004.Write Comment (0 comments)
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KrF scanner with 25% higher productivity Print E-mail
Feb 04, 2005 at 05:00 PM
ImageProduct Briefing Outline: Nikon continues its focus on high productivity lithography solutions with the introduction of the NSRS208D, an advanced KrF scanner with 25% higher throughput and extremely low cost of ownership. Customers can use the system for mass production of 110 nm or smaller devices. The system combines a high NA projection lens (0.82 NA) with a newly developed, high productivity platform that enables dramatic improvements in alignment. Alignment accuracy was reduced to 10 nm or less, a 33% improvement over Nikon's previous generation KrF scanner.Write Comment (0 comments)
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Molecular contamination monitoring in 193nm ArF tools Print E-mail
Feb 04, 2005 at 04:00 PM
Product Briefing Outline: Extraction has introduced what it claims is the industry's first complete toolset for detecting and measuring lithography molecular contamination at ultra low levels. Extraction's new tools - the TMB-193 and the LithoScout - fully address the industry's need for both continuous and periodic monitoring of molecular contamination in 193nm environments.Write Comment (0 comments)
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