The problem of the missing fab(s) was sorted very quickly with the announcement that Toshiba - with SanDisk, its NAND flash manufacturing buddy - would build two, not one new monster-sized 300mm fabs as part of their plan for world domination in that market. 

Reuters is citing sources from both Micron and Nanya Technology that a joint venture agreement has been signed between the two, a deal that includes Micron licensing its DRAM process technology and which could lead to more collaboration. 

Reuters is all over the alleged news that Toshiba and SanDisk are getting ready to start construction of two new 300mm fabs at a cost of $16.7 billion. The news arises from a news story in the Nikkei business daily, which follows on from several other Japanese stories on the subject last week. 

Varian Semiconductor (VSEA) said in 2005 that it would gain market share in 2006. It did. Then the ion implantation equipment supplier said it would gain further market share in 2006. Based on preliminary quick financial benchmark figures, it would seem VSEA did it again in 2007, but even more significantly than in the last two years! 

It was only a couple of years ago that Micron Technology took the difficult steps towards becoming a ‘diversified’ IC manufacturer, gradually reducing its dependence on the PC DRAM commodity market. A key part of that strategy was CMOS image sensors and, due to key acquisitions and manufacturing expertise, Micron became the largest image sensor manufacturer. 

The three major memory markets, DRAM, NAND and NOR, have suffered terribly in 2007. Rather than poor end-demand or lack of killer apps for consumers to consume, the problem is self-inflicted as demand has been incredibly strong but supply has been even stronger. 

The four big pure-play foundries have all now revealed their capital spending plans for 2008 with one common theme—a lack of spending!